   
Insulated Gate Bipolar Transistor
IGBT Module
Description
- IGBT Module: Insulated-Gate Bipolar Transistor (IGBT) is a three-terminal power semiconductor device which is generally used as an electronic switch. It is a very useful component for many power electronics equipment including Uninterruptible Power Supply (UPS), VFD, Rectifier and Inverter. Other name of IGBT Module: Powerblock Module.
- Insulated Gate Bipolar Transistor (IGBT) Module
- Figh efficiency.
- Efficient manufacturing.
Infineon IGBT Models: FD450R12KE4P, FD300R17KE4P, FF600R12KE4_E, FF450R12KE4_E, FF300R12KE4_E, FF400R17KE4_E, FF300R07KE4, FF400R07KE4, FF600R12KE4P, FF450R12KE4, FF300R12KE4, FF300R12KE4_B2, FF200R12KE4, FF600R12KE4, FF500R17KE4, FF200R17KE4, FF300R17KE4, FF400R17KE4, FF150R17KE4, FF300R12KE4P,
Semikron IGBT Models: SKM400GAL125D, SKM400GAR125D, SKiiP 01NAC066V3, SKiiP 01NEC066V3, SKiiP 02AC066V1, SKiiP 12NAB066V1, SKiiP 03NEB066V3, SKiiP 13NAB066V1, SK 20 DGDL 066 ET, SKiiP 14NAB066V1, SK 30 GBB 066 T
Additional information
| Capacity | 1 Phase In – 1 Phase Out / 5kVA – 10kVA |
|---|---|
| Phase | 1 Phase In – 1 Phase Out / 5kVA – 10kVA |
| Input Voltage | 3 × 380 V / 220 V + N, 3 × 400 V / 230 V + N, 3 × 415 V / 240 V + N |
| Output Voltage | 220/230/240 V + N |
| Input Frequency Range | 40-70 Hz |
| Input distortion tHDi | ≤ 3.5 % at 75 % load |
| Overall efficiency | Up to 93 % |
| Efficiency in eco-mode | 99 % |
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